| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a nonvolatile semiconductor memory including a floating gate electrode and a control gate electrode which enables the field concentration between the floating gate electrode and the control gate electrode, and suppresses the adjacent inter-cell interference. SOLUTION: The semiconductor device comprises a first memory cell C1 having a first island region 108<SB>1</SB>, and a first conductive spacer 107<SB>1</SB>; and a second memory cell C2 having a second island region 108<SB>2</SB>, and a second conductive spacer 107<SB>2</SB>. The memory cells C1, C2 further have a gate electrode insulation film 111 and a control gate electrode 112, the lower end of the gate electrode insulation film 111 is lower than the undersides of floating gate electrodes 102<SB>1</SB>, 102<SB>2</SB>, and the lower end of the control gate electrode 112 is at the same position or lower than the undersides of the floating gate electrodes 102<SB>1</SB>, 102<SB>2</SB>. COPYRIGHT: (C)2008,JPO&INPIT
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