| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor in which switching breakdown voltage can be assured while suppressing increase in on-resistance. SOLUTION: The transistor comprises a buried insulation layer, a semiconductor layer including a source portion having a plurality of first conductivity type source regions and a plurality of second conductivity type base contact regions arranged alternately on the major surface of the buried insulation layer, a first conductivity type drain portion, and a second conductivity type base region provided between the source portion and the drain portion in contact with the source regions and the base contact region, a gate insulating film provided on the base region, and a gate electrode provided on the gate insulating film wherein the junction of the source region and a base region is provided closer to the drain portion side than the junction of the base contact region and the base region. COPYRIGHT: (C)2008,JPO&INPIT
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