发明名称 DYNAMIC RANDOM ACCESS MEMORY AND SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a 2<SP>2N+1</SP>-bit semiconductor storage device which can be housed in a package of an aspect ratio 1:2 with a high effective ratio. SOLUTION: The main surface of a semiconductor substrate 2 of the aspect ratio 1:2 is divided equally into nine regions of 3 lines and 3 columns, and 2<SP>2N-2</SP>-bit subarray parts 3 of an aspect ration of 1:2 are arranged on each region other than the central region of the main surface of the substrate 2. A control circuit 4 and a group of pads 5 are provided on the central region. A memory chip of the aspect ratio 1:2 can be formed on the substrate 2, and the chip can be housed in a package of the same aspect ratio 1:2 as that of a conventional package with a high effective ratio. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007306012(A) 申请公布日期 2007.11.22
申请号 JP20070159108 申请日期 2007.06.15
申请人 RENESAS TECHNOLOGY CORP 发明人 TSUKIKAWA YASUHIKO
分类号 H01L21/8242;G11C11/401;H01L27/108 主分类号 H01L21/8242
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