| 摘要 |
PROBLEM TO BE SOLVED: To reduce defects in an epitaxial silicon film which is formed at a low deposition temperature. SOLUTION: A method for manufacturing a semiconductor device comprises a step of epitaxially growing a silicon film on a main surface of a single-crystal silicon substrate, and a step of performing heat treatment in oxidizing atmosphere. After forming a material except a single silicon exposed in a part of the single-crystal silicon substrate, an oxide film formed on the main surface of the single-crystal silicon substrate is removed by reduce treatment which is heat treatment in hydrogen atmosphere. Then, the silicon film is epitaxially grown on the main surface of the single-crystal silicon substrate at a temperature of 1,000°C or less, and the silicon film is made to run up onto the material except the single-crystal silicon substrate to be epitaxialiy grown. Then, heat treatment is performed in oxidizing atmosphere. COPYRIGHT: (C)2008,JPO&INPIT
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