| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protective element which can be made higher in electrostatic discharge breakdown voltage than before. SOLUTION: The electrostatic protective element which uses a pn junction of n-type Si and p-type SiGe whose built-in potential is nearly equal to the band gap of SiGe is connected between a terminal applied with static electricity and a terminal discharging static electricity. Then an ON voltage as a voltage with which a current begins to flow to the pn junction can be made lower than that of a pn junction of n-type Si and p-type Si. Even when the static electricity is applied and an inter-terminal voltage is still low, static electricity begins to be discharged, thereby obtaining the effect that the electrostatic discharge breakdown voltage is raised. COPYRIGHT: (C)2008,JPO&INPIT
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