| 摘要 |
PROBLEM TO BE SOLVED: To prevent transmission conductance gm from dropping when a double-doped channel structure is employed, and further, to improve controllability of the transmission conductance gm or threshold voltage Vth, thereby improving element characteristics. SOLUTION: A semiconductor device includes a substrate 1, an undoped channel layer 4 formed on the substrate 1, two supply layers 3 and 5 provided on and under the channel layer and doped with impurities, a metallic gate electrode 7 formed on the upper supply layer 5 constituting the two supply layers, and a semiconductor gate layer 2 formed under the lower supply layer 3 constituting the two supply layers. COPYRIGHT: (C)2008,JPO&INPIT
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