发明名称 |
SEMICONDUCTOR PROBE WITH HIGH RESOLUTION RESISTIVE TIP AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
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申请公布号 |
US2007267385(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
US20070835874 |
申请日期 |
2007.08.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
JUNG JU-HWAN;KIM JUN-SOO;SHIN HYUNG-CHEOL;HONG SEUNG-BUM |
分类号 |
B44C1/22;G01Q60/00;G01Q70/16;G01Q80/00;G01R1/067;G01R1/073;G11B9/14 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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