发明名称 SEMICONDUCTOR PROBE WITH HIGH RESOLUTION RESISTIVE TIP AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.
申请公布号 US2007267385(A1) 申请公布日期 2007.11.22
申请号 US20070835874 申请日期 2007.08.08
申请人 SAMSUNG ELECTRONICS CO., LTD;SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION 发明人 JUNG JU-HWAN;KIM JUN-SOO;SHIN HYUNG-CHEOL;HONG SEUNG-BUM
分类号 B44C1/22;G01Q60/00;G01Q70/16;G01Q80/00;G01R1/067;G01R1/073;G11B9/14 主分类号 B44C1/22
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