发明名称 |
Manufacturing method of semiconductor device |
摘要 |
It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions and a method of manufacturing the same without using complicated processes and increasing the size of a semiconductor chip. The method of manufacturing a semiconductor device comprises selectively epitaxially growing a single-crystal Si layer and continuously performing the epitaxial growth without bringing a substrate temperature increased during the growth to room temperature even once. An epitaxially grown surface is then etched and planarized. The substrate temperature is then cooled down to the room temperature.
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申请公布号 |
US2007266933(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
US20070802048 |
申请日期 |
2007.05.18 |
申请人 |
TSUCHIYA RYUTA;KIMURA YOSHINOBU;MORITA YUSUKE |
发明人 |
TSUCHIYA RYUTA;KIMURA YOSHINOBU;MORITA YUSUKE |
分类号 |
C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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