| 摘要 |
A method for manufacturing a spacer in a semiconductor device is provided to maintain a constant thickness of an oxide film by forming the oxide film using radicals with high reaction properties. A low radical oxidation device includes a horizontal reaction chamber(200), plural injectors(210), and a heater(220). Plural wafers are stacked in the horizontal reaction chamber. The injectors inject hydrogen and oxygen to the respective wafers in the reaction chamber. The heater is arranged to surround side and upper portions of the injector and the reaction chamber so that the reaction chamber is heated. A pump(230) is arranged outside the reaction chamber. Remaining sources are drained out from the reaction chamber by the pump.
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