| 摘要 |
Non-volatile resistance-switching oxide films, and devices therewith, are disclosed. One embodiment of a suitable device is composed of a SRO-CZO thin film having a thickness of from about 6 to about 30 nm, and composed of from about 3 to about 10 molar % of a SrRuO<SUB>3 </SUB>conducting oxide dopant and from about 90 to about 97 molar % of a CaZrO<SUB>3 </SUB>insulating oxide material. |
