发明名称 DIELECTRIC PROTECTIVE FILM FOR ZnS-SiO2 BASED OPTICAL INFORMATION RECORDING MEDIUM AND SPUTTERING TARGET FOR FORMING THE DIELECTRIC PROTECTIVE FILM
摘要 <P>PROBLEM TO BE SOLVED: To obtain a dielectric protective film for a ZnS-SiO<SB>2</SB>based optical information medium having excellent transmissivity and having reduced deterioration in reflectivity, and to obtain a sputtering target for forming the dielectric protective film. <P>SOLUTION: The dielectric protective film for a ZnS-SiO<SB>2</SB>based optical information recording medium or sputtering target has a composition comprising, by mol, 30 to 95% ZnS, 5 to 70% SiO<SB>2</SB>and Mn of 0.001&le;Mn/(Zn+Mn+Si)&le;0.2, and satisfying Mn<Si(atomic ratio). The dielectric protective film for a ZnS-SiO<SB>2</SB>based optical information recording medium or sputtering target further satisfies S/(Zn+Mn)<1. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007302920(A) 申请公布日期 2007.11.22
申请号 JP20060130151 申请日期 2006.05.09
申请人 NIKKO KINZOKU KK 发明人 TAKAMI HIDEO;YAHAGI MASATAKA
分类号 C23C14/34;C04B35/16;C04B35/547;C23C14/06;G11B7/24;G11B7/254;G11B7/257;G11B7/26 主分类号 C23C14/34
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