| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a production method of a gallium nitride-based compound semiconductor capable of forming an unevenness without performing a post-processing such as a dry or wet etching of the gallium nitride-based compound semiconductor after removing a substrate from the gallium nitride-based compound semiconductor and capable of suppressing largely a damage caused by the post-processing for preventing the gallium nitride-based compound semiconductor from being directly processed. <P>SOLUTION: This production method of a gallium nitride-based compound semiconductor comprises: forming an unevenness 5 by which a gallium nitride-based compound semiconductor layer 1 can epitaxial-grow, on an one-side main face of a single crystal substrate 4 comprising XB<SB>2</SB>(wherein X is one or more element selected from Zr, Ti and Hf); causing the gallium nitride-based compound semiconductor layer 1 to grow on the one-side main face of a single crystal substrate 4; and forming the unevenness 5 by transferring the same on the one-side main face by removing the single crystal substrate 4 from the gallium nitride-based compound semiconductor layer 1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
