| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which a countermeasure to avoid antenna effects is taken, and a method of manufacturing a semiconductor integrated circuit device in which the countermeasure can be readily taken to avoid the antenna effects. SOLUTION: The method of manufacturing the semiconductor integrated circuit device comprises: a formation step of forming a first-conductive semiconductor region, a first first-conductive diffusion region formed on the first-conductive semiconductor region, a gate dielectric formed on the first semiconductor region, a gate electrode on the gate dielectric, and a wiring layer that is electrically connected to the gate electrode; a study step of studying the need for taking a countermeasure to avoid antenna effects in the wiring layer subsequent to the formation step; and a countermeasure step of replacing the first first-conductive diffusion region with the second second-conductive diffusion region to form a pn junction between the second second-conductive diffusion region and first semiconductor region, and electrically connect the second second-conductive diffusion region and the wiring layer when the study step determines that the countermeasure needs to be taken. COPYRIGHT: (C)2008,JPO&INPIT
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