| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the breakdowns of its gate insulating layer are generated hardly which are caused by the electric-field concentrations to the corners of its source and drain electrodes, to provide an electrooptic device and an electrooptic appliance which use the semiconductor device, and to provide the manufacturing method of the semiconductor device. SOLUTION: An organic TFT 1 of the semiconductor device has interdigital source and drain electrodes 21, 22 on a substrate 10 as to be separated from each other, a semiconductor layer and a gate insulating layer which are laminated successively on the electrodes 21, 22, and a gate electrode 50 disposed in such a region present on the gate insulating layer as to overlap with the respective one-portions of the source and drain electrodes 21, 22 when observing them from the normal direction of the substrate 10. Hereupon, corners 20a, 20b of the end and root of comb teeth 21p, 22p of the source and drain electrodes 21, 22 so have nearly arcuate shapes as to be able to relax the electric-field concentrations to the corners 20a, 20b. COPYRIGHT: (C)2008,JPO&INPIT |
