| 摘要 |
A non-volatile memory integrated circuit device and a method fabricating the same are disclosed. The non-volatile memory integrated circuit device includes a semiconductor substrate, word and select lines, and a floating junction region, a bit line junction region and a common source region. The semiconductor substrate has a plurality of substantially rectangular field regions, and the short and long sides of each substantially rectangular field region are parallel to the row and column directions of a matrix, respectively. The word lines and select lines extend parallel to the row direction on the semiconductor substrate, the word lines crossing a plurality of substantially rectangular field regions disposed in the row direction, and the select lines partially overlapping substantially rectangular field regions arranged in the row direction of the matrix, such that the parts of the long sides of the substantially field regions and the short sides of the substantially rectangular field regions are located below the select lines. The floating junction region is formed within the semiconductor substrate between the word lines and the select lines, the bit line junction region is formed opposite the floating junction region, and the common source region is formed opposite the floating junction region.
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