发明名称 Wafer e.g. substrate, deformation reducing method for use during production of e.g. microprocessor, involves determining deformation state of wafer and/or comparable wafer of bulk with measuring unit and automatically generating data record
摘要 <p>The method involves determining a deformation state of a wafer (10) e.g. substrate, and/or a comparable wafer of a bulk with a measuring unit and automatically generating a deformation data record. An abrasion process is provided for partially removing a layer (1) on a rear side of the wafer and/or comparable wafer of the bulk. A parameter of the abrasion process is adjusted and/or controlled depending on the deformation data record, where the abrasion process takes place via a bundled ion beam. The abrasion process is designed as an etching process. An independent claim is also included for a device for reducing deformation of a wafer.</p>
申请公布号 DE102006023946(A1) 申请公布日期 2007.11.22
申请号 DE20061023946 申请日期 2006.05.17
申请人 INFINEON TECHNOLOGIES AG 发明人 POTH, JOCHEN;WEIGEL, SASCHA;GEORGI, MATTHIAS
分类号 H01L21/302 主分类号 H01L21/302
代理机构 代理人
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