发明名称 |
Wafer e.g. substrate, deformation reducing method for use during production of e.g. microprocessor, involves determining deformation state of wafer and/or comparable wafer of bulk with measuring unit and automatically generating data record |
摘要 |
<p>The method involves determining a deformation state of a wafer (10) e.g. substrate, and/or a comparable wafer of a bulk with a measuring unit and automatically generating a deformation data record. An abrasion process is provided for partially removing a layer (1) on a rear side of the wafer and/or comparable wafer of the bulk. A parameter of the abrasion process is adjusted and/or controlled depending on the deformation data record, where the abrasion process takes place via a bundled ion beam. The abrasion process is designed as an etching process. An independent claim is also included for a device for reducing deformation of a wafer.</p> |
申请公布号 |
DE102006023946(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
DE20061023946 |
申请日期 |
2006.05.17 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
POTH, JOCHEN;WEIGEL, SASCHA;GEORGI, MATTHIAS |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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