| 摘要 |
A method for correcting an optical proximity effect is provided to control a CD(Critical Dimension) uniformity reliably among different structures by optimizing a slit transmittance ratio of the structure based on focusing characteristics of a projection objective lens. A projection exposure apparatus exposes a photo-sensitive substrate(W) arranged on an image surface(IS) region of a projection objective lens. The photo-sensitive substrate includes at least one image of a pattern of a mask(M), which is arranged on an object surface(OS) region of the projection objective lens(PO). An illumination system(ILL) receives light from a main light source(LS) and irradiates an illumination radiation beam on the pattern of the mask. The projection objective lens is arranged between the mask and the substrate and focuses the pattern(PAT) on the image surface, which is optically conjugate with respect to the object surface. |
