| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an integrated semiconductor optical element which is capable of being easily manufactured through simple processes, improving its reliability, and reducing its light scattering loss. <P>SOLUTION: The integrated semiconductor optical element 100 is equipped with semiconductor elements 21 and 22 formed on a substrate 11. A Zn-doped InP layer 14 is formed on the active layers 12a and 12b of the optical elements 21 and 22, respectively. The InP layer 14 is equipped with p-type clad regions 14a and 14b arranged on the active layers 12a and 12b respectively, and an element isolation region 14c interposed between the clad regions 14a and 14b. The element isolation region 14c contains Zn combined with H and has higher resistance than the p-type clad regions 14a and 14b. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
