| 摘要 |
PROBLEM TO BE SOLVED: To achieve the high withstand voltage of a vertical Schottky barrier diode (SBD) employing a nitride semiconductor. SOLUTION: A semiconductor device has a drift layer 14 made of a gallium nitride and having a first surface and a second surface opposing the first surface, a Schottky electrode 16 formed on the first surface of the drift layer 14, and an ohmic electrode 15 electrically connected to the second surface of the drift layer 14 via a contact layer 13. The drift layer 14 has, on at least the upper portion thereof, highly-resistive regions 14a whose one part is selectively formed to have a high resistance. COPYRIGHT: (C)2008,JPO&INPIT |
