| 摘要 |
To provide a slurry for Chemical Mechanical Polishing, a Chemical Mechanical Polishing method using said slurry, and a method of producing electronic devices using said method that makes it possible to achieve a low scratch process capability in processing surfaces such as SiO<SUB>2 </SUB>film surfaces and the like and also to enable speed polishing to attain a high processing efficiency. Slurry for Chemical Mechanical Polishing characterized in comprising abrasive grains and water, wherein said abrasive grains are composite particles coated with ceria particles consisting of organic host particles and ceria particles, zeta potential of said composite particles being a negative potential, the organic host particles constituting the composite particles coated with ceria particles are organic host particles to which carboxyl groups and sulfonyl groups are introduced; the slurry is added with panarization additive; and the planarization additive is poly(methyl)acrylic acid ammonium salt.
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