发明名称 |
High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit |
摘要 |
Embodiments of the invention provide a high voltage transfer circuit, a row decoder circuit comprising the high voltage transfer circuit, and a non-volatile semiconductor memory device comprising the high voltage transfer circuit. In one embodiment, the invention provides a high voltage transfer circuit of a semiconductor memory device comprising a high voltage switch comprising a high voltage transistor comprising a first terminal connected to a boosted voltage via a first depletion-type transistor and comprising a second terminal connected to an output node via a second depletion-type transistor. The high voltage transfer circuit further comprises a driver circuit adapted to drive the first and second depletion-type transistors and the high voltage transistor in response to an input signal.
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申请公布号 |
US2007268774(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
US20060634061 |
申请日期 |
2006.12.06 |
申请人 |
LEE JONG-HOON;JEONG YONG-TAEK;KIM JIN-KOOK |
发明人 |
LEE JONG-HOON;JEONG YONG-TAEK;KIM JIN-KOOK |
分类号 |
G11C8/00;G11C11/34;G11C16/06 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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