A SEMICONDUCTOR DEVICE

摘要

A unipolar semiconductor device having a drift layer (3) doped according to a first conductivity type forming a conducting path and regions (7, 8) doped according to a second conductivity type and arranged next to the drift layer has said drift layer and said regions of a semiconductor material having an ionisation energy Ei of dopants of the second conductivity type therein exceeding 0.5 eV and/or a solubility of said dopants of said second conductivity type therein being less than 10 <SUP>18</SUP>cm<SUP>-3</SUP>.