| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection apparatus of a semiconductor device and an inspection method of the semiconductor device which can evaluate the semiconductor device with high precision. SOLUTION: To a semiconductor wafer 22 of a stage where pn junction and a plug are formed, a primary electron beam 17 is irradiated two or more times on irradiation conditions where potential equivalent to the time of real operation is applied to the pn junction. A secondary electron beam 18 generated according to the above is detected by a photomultiplier 67, and the detection signal is outputted to a secondary electron detection system circuit 34. The secondary electron detection system circuit 34 outputs a brightness signal of a secondary electron image 51 for an inputted detection signal via A/D conversion device 66 after amplifying the inputted detection signal with amplifiers 62 and 63. On the occasion of such inspection, the capacity of the primary electron beam 17 is supervised by the monitor 36 of the primary electron beam amount. The amplification rate and the offset potential of the secondary electron detection system circuit 34 are supervised by a fixed level signal monitor 37. When variation arises in these, the varied part is corrected to the brightness signal of the secondary electron image 51. COPYRIGHT: (C)2008,JPO&INPIT
|
