| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer for a resist material, which is less in components difficult to dissolve in a resist solvent and its production method; to provide a resist material containing the polymer and exhibiting an extremely lessened number of development defects in photolithography by ≤300 nm wavelength light, in particular, using ArF excimer laser light as a light source; and to provide a method of forming a pattern using the resist material. <P>SOLUTION: The method of producing the polymer for the resist material is carried out by the followings. A solution containing a chain transfer agent is preliminarily prepared in a reactor, being kept at a temperature for polymerization, and a solution containing a monomer and a polymerization initiator is continuously or intermittently dropped thereto, radically polymerizing the monomer. The polymer produced by the production method is less in components difficult to dissolve in a resist solvent; and is useful for obtaining the resist material to form a fine pattern having an extremely lessened defect number in photolithography, by using the polymer as a base resin for the resist material, in particular as the base resin for the chemically amplifying type positive resist material for use in photolithography using ArF excimer laser light as a light source. <P>COPYRIGHT: (C)2008,JPO&INPIT |
