| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of efficiently forming a thin-film transistor circuit within a limited space at a high density, and to provide a method of manufacturing the same. SOLUTION: An undercoating film UC is made to have a two-layer structure in which a silicon oxide layer SiO is formed on a silicon nitride layer SiN. The upper silicon oxide layer SiO is partially etched to form a level difference BP between a first plane PL1 and a second plane PL2 of the original surface. The height of the level difference BP is set as 2-3μm while the width of the level difference BP is desirably 8μm or more. An amorphous silicon film ASI is formed over the surface of the undercoating film UC having the level difference BP. The focal position FB of a continuous oscillation laser LS is set at the amorphous silicon film ASI on the first plane PL1 associated with the level difference BP, and the laser beam scans the glass substrate SUB with the amorphous silicon film ASI formed thereon, in the direction S that crosses the longitudinal direction of the beam profile of the laser LS. Consequently, the amorphous silicon film ASI on the first plane PL1 associated with the level difference BP is modified into a belt-shaped crystalline silicon film SELAX (selectively enlarging laser crystallization). COPYRIGHT: (C)2008,JPO&INPIT
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