发明名称 VERBESSERTER RISSUNTERBRECHER FÜR HALBLEITERCHIPS
摘要 A semiconductor chip, in accordance with the present invention, includes a substrate and a crack stop structure. The crack structure includes a first conductive line disposed over the substrate and at least two first contacts connected to the substrate and to the first conductive line. The at least two first contacts are spaced apart from each other and extend longitudinally along a length of the first conductive line. A second conductive line is disposed over a portion of the first conductive line, and at least two second contacts are connected to the first conductive line and the second conductive line. The at least two second contacts are spaced apart from each other and extend longitudinally along a length of the second conductive line.
申请公布号 DE60126960(T2) 申请公布日期 2007.11.22
申请号 DE2001626960T 申请日期 2001.08.30
申请人 INFINEON TECHNOLOGIES AG 发明人 BRINTZINGER, AXEL
分类号 H01L23/00;H01L23/58 主分类号 H01L23/00
代理机构 代理人
主权项
地址