摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit for allowing easy evaluation of insulation pressure resistance when a multiple trench structure is employed. SOLUTION: The semiconductor integrated circuit comprises an FET 22 disposed between a trench field region 14 located between double trenches 12, 13 that encircle a device 3 and a field region 11. If, after the FET 22 is brought into an OFF state and the pressure resistance of the trenches 12, 13 is evaluated, a power VCC is supplied to a semiconductor circuit 21 by connecting a pad 9(2) connected to the field region 14 to a pin 7(1), then the FET 22 is caused to turn on and the field regions 11, 14 are set to a field ground potential FG. COPYRIGHT: (C)2008,JPO&INPIT
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