| 摘要 |
PROBLEM TO BE SOLVED: To reduce a gate resistance and reduce a parasitic capacitance between the gate and an ohmic electrode when a field effect transistor is manufactured. SOLUTION: A method of manufacturing a field effect transistor includes steps of forming an insulating film 5 on a semiconductor active layer 3 on a semiconductor substrate 1, forming an opening 5a passed through the insulating film 5, laminating a low-resistance metallic film 7A dry etchable with a high-melting-point metallic film 6 on the insulating film 5 and on the semiconductor active layer 3 exposed by the opening 5a of the insulating film, forming a T-shaped electrode 9 by etching the laminated films, forming a protective film 12 covering the upper and side surfaces of at least the low-resistance metallic film 7A within the electrode 9, and forming a gap 10 in the vicinity of the electrode 9 by removing part or whole of the insulating film 5 with use of an etching solution containing hydrofluoric acid in the presence of the protective film 12. The insulating film 5 can be removed while the protective film 12 protects the electrode 9 from hydrofluoric acid. COPYRIGHT: (C)2008,JPO&INPIT
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