| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To control threshold voltage distributions of a cell connected to a last word line after programming to have a narrow width similarly to that of other cells. <P>SOLUTION: A cell connected to a last word line is programmed after programming and program verification of a selected cell are completed. Thus, a programming method of a flash memory element capable of solving the problem and securing a chip read margin to improve yield is provided. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
