Silicon Epitaxial Wafer and Manufacturing Method Thereof

摘要

A silicon epitaxial wafer 100 is formed by growing a silicon epitaxial layer 2 on a silicon single crystal substrate 1, produced by means of a CZ method, and doped with boron so that a resistivity thereof is less than 0.018 Omega.cm. The silicon single crystal substrate 1 has a density of bulk stacking faults 13 in the silicon single crystal substrate 1 in the range of 1x10⁸ cm^-3 or higher and 3x10⁹ cm^-3 or lower. Thereby, provided is a silicon epitaxial wafer having a boron doped p⁺ CZ substrate with a resistivity of 0.018Omega.cm or lower, and a state of formation of oxygen precipitates can be adjusted adequately so as to secure a sufficient IG effect and to suppress a problem of bow and deformation of a substrate, despite that sizes of oxygen precipitates is so small to be observed accurately.