| 摘要 |
The present invention provides a structure and the manufacturing method of high precision chip capacitor fabricated on silicon substrate. The structure of the chip capacitor consists of a dielectric layer formed on the surface of a heavily doped silicon substrate with an inner primary portion of thin oxide and an outer secondary portion of thicker oxide; both oxides are merged seamlessly together into the single dielectric layer thus allowing a layer of electrically conducting film deposited on its surface as the first electrode of the capacitor, while the heavily doped silicon substrate on the opposite surface of the dielectric oxide plays as the bottom electrode. The bottom electrode is electrically connected up to a second electrode on the upper surface through a via so that both the first and second electrodes can be on the same surface for subsequent bumping process, finally, two solder bumps is formed on the top as a surface mountable chip capacitor component.
|
