发明名称 |
SONOS memory device having nano-sized trap elements |
摘要 |
A silicon-oxide-nitride-oxide-silicon (SONOS) memory device includes a memory type transistor including a gate with a SONOS structure on a semiconductor substrate. The gate is formed by sequentially stacking a tunneling oxide layer, a memory node structure including a trap site having nano-sized trap elements in which charges passing through the tunneling oxide layer are trapped, and a gate electrode. The nano-sized trap elements may be a crystal layer composed of nanocrystals that are separated from one another to trap the charges. The memory node structure may include additional memory node layers which are isolated from the nano-sized trap elements.
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申请公布号 |
US2007267688(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
US20070878277 |
申请日期 |
2007.07.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JU-HYUNG;KIM CHUNG-WOO;CHAE SOO-DOO;JEONG YOUN-SEOK |
分类号 |
H01L21/8247;H01L29/788;H01L21/28;H01L27/108;H01L27/115;H01L29/423;H01L29/51;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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