| 摘要 |
Provided is a method of manufacturing a semiconductor device having an ONO film composed of a bottom silicon oxide film, a silicon nitride film and a top silicon oxide film over a substrate. The top silicon oxide film of the ONO film is formed in the following manner. A silicon oxide film is formed over the silicon nitride film, and then a hydrogen gas and an oxygen gas are reacted over the silicon nitride film by heating the silicon nitride film (substrate) while reducing the pressure from the atmospheric pressure to grow the silicon oxide film into the top silicon oxide film. According to the present invention, a silicon oxide film having good uniformity and fewer defects can be formed over a silicon-containing underlayer.
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