| 发明名称 |
Fin field effect transistor and method for forming the same |
| 摘要 |
Example embodiments are directed to a method of forming a field effect transistor (FET) and a field effect transistor (FET) including at least one buried gate structure, buried entirely below an upper surface of an active fin and an upper surface of the isolation region.
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| 申请公布号 |
US2007267676(A1) |
申请公布日期 |
2007.11.22 |
| 申请号 |
US20070714161 |
申请日期 |
2007.03.06 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KEUNNAM;YOSHIDA MAKOTO;PARK DONGGUN;YANG WOUNSUCK |
| 分类号 |
H01L21/336;H01L21/8242;H01L27/108;H01L29/78 |
主分类号 |
H01L21/336 |
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