| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a bipolar transistor with a low K material in an emitter-base spacer region. SOLUTION: The present invention provides the bipolar transistor located on a semiconductor wafer substrate. The bipolar transistor may include a collector located in the semiconductor wafer substrate, a base located in the collector, and an emitter located on the base and in contact with at least a portion of the base, wherein the emitter has a low K layer therein. The low K layer may be, for example, located in proximity to a side of the emitter, or located in proximity to opposing sides of the emitter. In all embodiments, however, the low K layer does not interfere with proper functions of the bipolar transistor, and substantially reduces the emitter-base capacitance typically associated with conventional bipolar transistors. COPYRIGHT: (C)2008,JPO&INPIT |
