Silicon on insulator-transistor for use in semiconductor component, has substrate area provided below or in proximity of source region and another substrate area provided below or in proximity of drain zone

摘要

The transistor (1) has a substrate (2) of pipe type (n), where an insulation layer is arranged on the substrate and a semiconductor layer is arranged on the insulation layer. A substrate area (16) is provided below or in the proximity of a source region and another substrate area (18) is provided below or in the proximity of a drain zone. A part of a third substrate area is provided between substrate areas (16, 18) with a lamellar semiconductor area (20).