Programmable resistive memory cell includes lower mask between lower electrode and programmable resistance layer, and upper mask between programmable resistance layer and upper electrode, where masks comprise current-inhibiting regions

摘要

A programmable resistive memory cell comprises a lower electrode (20), a programmable resistance layer, and an upper electrode. A lower mask is between the lower electrode and the programmable resistance layer, and an upper mask is between the programmable resistance layer and the upper electrode. The lower mask and the upper mask comprise current-inhibiting regions. A programmable resistive memory cell comprises a lower electrode, a programmable resistance layer, and an upper electrode. A lower mask is between the lower electrode and the programmable resistance layer, and an upper mask is between the programmable resistance layer and the upper electrode. The lower mask and the upper mask comprise current-inhibiting regions. The current-inhibiting regions comprise zinc oxide. A lateral extent of the current-inhibiting regions is 2-20 nm. The programmable resistance layer comprises a transition metal oxide. The transition metals comprising niobium, titanium, nickel, zirconium, chromium, cobalt, manganese, vanadium, tantalum, hafnium, or iron forms an oxide. The programmable resistance layer comprises strontium, lead, praseodymium, or calcium. The lower electrode and the upper electrode comprise tungsten, platinum, or palladium. An independent claim is included for a method of fabricating a resistive memory cell.