| 摘要 |
<p>A semiconductor device and a manufacturing method of the same are provided to form an RF element circuit unit irrespective of an influence of an inductor cell process by separating the inductor cell process from a transistor and metal line manufacturing process. A first substrate includes an inductor cell(830) and a penetrating electrode(810). A second substrate includes an RF element circuit unit having a transistor and a wire. A connective electrode is formed to connect the inductor cell and the RF element circuit unit to each other. In the first substrate, the inductor cell is formed on a semiconductor substrate(800). The penetrating electrode is connected to the inductor cell and penetrates the semiconductor substrate. The penetrating electrode is formed on a scribe lane. The connective electrode is electrically connected through the penetrating electrode to the inductor cell.</p> |
