| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device advantageous in increasing capacity and speed. <P>SOLUTION: The semiconductor storage device includes: a memory cell array 11 including a first region 11-2 having a plurality of memory cells MC capable of storing n (n is a natural number) bit data and a second region 11-1 having a plurality of memory cells capable of storing k (k>n, k is a natural number) bit data; a data storage circuit 27 including a plurality of data caches; and control circuits 17, 20 which control the memory cell array and the data storage circuit so that the k bit data read from the k/n memory cells of the first region are stored in the data storage circuit and stored in the memory cells of the second region. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
