| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode in which, even if a chip size is reduced, desired properties can be obtained and pressure resistance is high. SOLUTION: This diode having a first main face and a second main face which are located at sides opposite to each other comprises: a first semiconductor domain of a first conductive type formed contacted with a cathode; a second semiconductor domain; a third semiconductor domain of a second conductive type formed contacted with a main electrode; and a fourth semiconductor domain of a first conductive type formed on a face crossing with the first main face, wherein the third semiconductor domain is not joined directly to the first and fourth semiconductor domains and is connected to the first and fourth semiconductor domains via the second semiconductor domain. COPYRIGHT: (C)2008,JPO&INPIT
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