发明名称 Halbleiterleistungsbauteilstapel in Flachleitertechnik mit oberflächenmontierbaren Außenkontakten und ein Verfahren zur Herstellung desselben
摘要 <p>A power semiconductor component stack, using lead technology with surface-mountable external contacts, includes at least two MOSFET power semiconductor components each having a top side and an underside. The underside includes: a drain external contact area, a source external contact area and a gate external contact area. The top side includes at least one source external contact area and a gate external contact area. The gate external contact areas on the top side and the underside are electrically connected to one another. The power semiconductor component stack is a series circuit or a parallel circuit of MOSFET power semiconductor components arranged one above another in a plastic housing composition.</p>
申请公布号 DE102005027356(B4) 申请公布日期 2007.11.22
申请号 DE20051027356 申请日期 2005.06.13
申请人 INFINEON TECHNOLOGIES AG 发明人 HOSSEINI, KHALIL;KOENIGSBERGER, ALEXANDER;OTREMBA, RALF;MAHLER, JOACHIM;SCHLOEGEL, XAVER;SCHIESS, KLAUS
分类号 H01L25/07;H01L21/50 主分类号 H01L25/07
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