METHODS AND MATERIALS FOR GROWING III-NITRIDE SEMICONDUCTOR COMPOUNDS CONTAINING ALUMINUM

摘要

A method for growing III-nitride films containing aluminum using Hydride Vapor Phase Epitaxy (HVPE) is disclosed, and comprises using corrosion-resistant materials in an HVPE system, the region of the HVPE system containing the corrosion-resistant materials being an area that contacts an aluminum halide, heating a source zone with an aluminum-containing source above a predetermined temperature, and- growing the III-nitride film containing aluminum within the HVPE system containing the corrosion-resistant material.