| 摘要 |
A method of manufacturing a GaN self-standing substrate is provided to simplify a manufacturing process of the GaN self-standing substrate by applying a laser lift-off scheme for delaminating a GaN thick film from a mother substrate. A first gas injection tube(110) injects a halide gas, such as HCl, to one end of a reaction tube. A gas containing a V-group element, such as NH3, is injection to a second injection tube(120). A container(130), on which a III-group element, such as Ga, is formed in the middle of the first gas injection tube. A mother substrate(200), such as a silicon carbonate or sapphire, is mounted on a mother substrate mount in the reaction tube. A ventilating hole(150) ejects a reaction gas to outside. An electric furnace(160) is arranged on an outer wall of the reaction tube, so that a temperature of the reaction tube is adjusted. A substrate holder(170) extracts the mother substrate to outside.
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