| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of etching a metal film with which etching is carried out little by little to remove every one layer or several layers of the metal film without etching high-dielectric-constant dielectric thin-film lying underneath the metal film, and a method of manufacturing semiconductor devices using the same. SOLUTION: The method of etching the metal film 21 and the method of manufacturing semiconductor device 1 include a process of forming a gate 12 on a semiconductor substrate 10. The process includes a first step of allowing the metal film 21 to adsorb ions or radicals of halogen atoms without applying any electrical bias, and a second step of carrying out etching by applying an electrical bias to ions or radicals including oxygen. The method of manufacturing semiconductor device 1 includes both the first step and the second step, and thereby etching of an insulating layer 22 can be suppressed which is an underlying high-dielectric-constant dielectric for the gate. COPYRIGHT: (C)2008,JPO&INPIT |
