| 摘要 |
A method of mask design comprises creating a first mask design by aligning mask resolution enhancement technology (RET) features, such as alternating phase shifting regions or sub-resolution assist features, with critical width segments of the integrated circuit design, such that the first mask design meets manufacturability design rules, and creating a second mask design by aligning RET features with the critical width segments of the integrated circuit design, such that the second mask design meets lithographic design rules in regions local to the critical width segments. Features of the second mask design are identified that violate the manufacturability design rules, and then a third mask design is created, derived from the second mask design wherein the features of the second mask design that violate the manufacturability rules are selectively replaced by features from the first mask design so that the third mask design meets the manufacturability design rules. |
