发明名称 DONOR SUBSTRATE FOR LASER INDUCED THERMAL IMAGING AND FABRICATION METHODE FOR ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE USING THE SAME
摘要 A donor substrate for an LITI and a method for manufacturing an organic EL display device are provided to improve efficiency of the LITI process by adjusting a thickness of a transfer layer on the donor substrate. A donor substrate for an LITI(Laser Induced Thermal Imaging) includes a substrate(100), an optical-thermal conversion layer(110), a buffer layer(120), and a transfer layer(130). The optical-thermal conversion layer is formed on the substrate. The buffer layer is formed on the optical-thermal conversion layer. The transfer layer is formed on the buffer layer and includes a pixel electrode of a flat panel display device. A thickness of the transfer layer is between 50 and 300 angstrom. The pixel electrode is selected from the group consisting of Al, Mg, Mg-Ag, Ca, Ca-Ag, transparent electrode single layer, a double layer of a transparent electrode and Ag, or an Ag alloy, a double layer of the transparent electrode and Al or an Al alloy, and a triple layer of the transparent electrode and Ag or the Ag alloy, and Al or the Al alloy.
申请公布号 KR20070111702(A) 申请公布日期 2007.11.22
申请号 KR20060044819 申请日期 2006.05.18
申请人 SAMSUNG SDI CO., LTD. 发明人 LEE, SANG BONG;YEO, JONG MO;LEE, DAE WOO
分类号 H05B33/22;H05B33/10 主分类号 H05B33/22
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