发明名称 |
Semiconductor memory e.g. dynamic RAM, device, has device sensing current temperature, where memory device can be operated in energy saving mode for pre-defined time, which begins during activation of control signal |
摘要 |
<p>The device has a temperature sensing device for sensing current temperature, where sensing is induced by a control signal (ZQC). The semiconductor memory device can be operated in an energy saving mode for a pre-specified time, which begins during an activation of the control signal. The energy saving mode has no energy consumption. The energy saving mode is an open-circuit operation condition or a switch off mode. The energy saving mode is a non access mode, in which an access to a memory core is not executed. An independent claim is also included for a method for controlling a semiconductor memory device.</p> |
申请公布号 |
DE102007017579(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
DE20071017579 |
申请日期 |
2007.04.13 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, KYUNG-HOON;MORAN, PATRICK B. |
分类号 |
G11C11/4193;G11C5/14 |
主分类号 |
G11C11/4193 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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