发明名称 Semiconductor memory e.g. dynamic RAM, device, has device sensing current temperature, where memory device can be operated in energy saving mode for pre-defined time, which begins during activation of control signal
摘要 <p>The device has a temperature sensing device for sensing current temperature, where sensing is induced by a control signal (ZQC). The semiconductor memory device can be operated in an energy saving mode for a pre-specified time, which begins during an activation of the control signal. The energy saving mode has no energy consumption. The energy saving mode is an open-circuit operation condition or a switch off mode. The energy saving mode is a non access mode, in which an access to a memory core is not executed. An independent claim is also included for a method for controlling a semiconductor memory device.</p>
申请公布号 DE102007017579(A1) 申请公布日期 2007.11.22
申请号 DE20071017579 申请日期 2007.04.13
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, KYUNG-HOON;MORAN, PATRICK B.
分类号 G11C11/4193;G11C5/14 主分类号 G11C11/4193
代理机构 代理人
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