| 摘要 |
A semiconductor device is provided to suppress disturb, by suppressing variation in each memory cell and implementing low current rewrite operation in high speed. A plurality of bit lines is arranged to cross with a plurality of word lines. A plurality of memory cells is arranged at crossing points of the word lines and the bit lines. The plurality of memory cells has a tunnel magnetoresistive element and a MOSFET. The tunnel magnetoresistive element is stacked with a fixed layer, a tunnel film and a free layer. A gate of the MOSFET is connected to the word line, and a drain of the MOSFET is connected to one end of the tunnel magnetoresistive element. The fixed layer of which electron spin direction is fixed, and is adjacent to the tunnel film. The free layer has an electron spin direction in parallel or anti-parallel with the fixed layer. Spin of the free layer writes information using spin injection magnetization inversion. During the write operation, a first current flows to the tunnel magnetoresistive element, and then a second current higher than the first current flows to the tunnel magnetoresistive element.
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