METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor device containing conductive metal compound film formed by deposition steps. SOLUTION: The semiconductor forming method of this invention comprises a step to form a primary conductive metal compound film on a substrate by an organometallic chemical vapor deposition process, and a step to form a secondary conductive metal compound film on the primary conductive metal compound film by a physical vapor deposition process. The primary and secondary conductive metal compound films are formed in a state where the exposure of the primary conductive compound film to atomic oxygen is prevented or minimized. Therefore, the degradation of the primary conductive metal compound film can be reduced. COPYRIGHT: (C)2008,JPO&INPIT