发明名称 |
Static noise-immune SRAM cells |
摘要 |
A static random access memory (SRAM) cell includes a first load device, a first pull-down transistor, and a switch-box coupled between the first load device and the first pull-down transistor. The switch-box is configured to receive a switch control signal to turn off a first connection between the first load device and the first pull-down transistor during read operations of the SRAM cell and to turn on the first connection during write operations.
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申请公布号 |
US2007268747(A1) |
申请公布日期 |
2007.11.22 |
申请号 |
US20060483819 |
申请日期 |
2006.07.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN WESLEY;LAI FANG-SHI JORDAN;LEE CHIA-FU;LIN SHENG CHI;WANG PING-WEI;CHANG CHANG-YUN;ZHONG TANG-XUAN;LEE TSUNG-LIN |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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